ul 1 99 8 Influence of the exchange reaction on the electronic structure of GaN / Al junctions
نویسنده
چکیده
Ab-initio full-potential linearized augmented plane wave (FLAPW) calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. Although the detailed mechanism is not understood, the exchange reaction has been purported to influence the Schottky barrier height as a result of the formation of an interfacial GaxAl1−xN layer. In particular, the effects of interface structure (i.e. interfacial bond lengths, semiconductor surface po-
منابع مشابه
Influence of the exchange reaction on the electronic structure of GaN / Al junctions
Ab-initio full-potential linearized augmented plane wave (FLAPW) calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. Although the detailed mechanism is not understood, the exchange reaction has been purported to influence the Schottky barrier height as a result of the forma...
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